PART |
Description |
Maker |
EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA) 128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
EBD11ED8ADFB-7B EBD11ED8ADFB EBD11ED8ADFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 1GB的无缓冲DDR SDRAM的内存(128M的话x72位,2个等级) 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks) 128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
EBJ11ED8CAFA-DJ-E |
128M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
HYS72D128300GBR-7-B |
128M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
INFINEON TECHNOLOGIES AG
|
HMT351U6BFR8C-G7 HMT325U6BFR8C-H9 HMT351U7BFR8C-H9 |
512M X 64 DDR DRAM MODULE, DMA240 256M X 64 DDR DRAM MODULE, DMA240 512M X 72 DDR DRAM MODULE, DMA240 128M X 64 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
IMSH1GU03A1F1C-08D |
128M X 64 DDR DRAM MODULE, DMA240 GREEN, UDIMM-240
|
Qimonda AG
|
M392T2863QZA-CF7 |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Samsung Semiconductor Co., Ltd.
|